4N35/ 4N36/ 4N37/ 4N38
Document Number 83717
Rev. 1.5, 27-Jan-05
Vishay Semiconductors
www.vishay.com
1
i179004
i179004
1
2
3
6
5
4
B
C
E
A
C
NC
Pb
Pb-free
e3
Optocoupler, Phototransistor Output, With Base Connection
Features
Isolation Test Voltage 5300 V
RMS
Interfaces with common logic families
Input-output coupling capacitance < 0.5 pF
Industry Standard Dual-in line 6-pin package
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
Underwriters Laboratory File #E52744
DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Applications
AC mains detection
Reed relay driving
Switch mode power supply feedback
Telephone ring detection
Logic ground isolation
Logic coupling with high frequency noise rejection
Description
This data sheet presents five families of Vishay Indus-
try Standard Single Channel Phototransistor Cou-
plers.These families include the 4N35/ 4N36/ 4N37/
4N38 couplers.
Each optocoupler consists of gallium arsenide infra-
red LED and a silicon NPN phototransistor.
These couplers are Underwriters Laboratories (UL)
listed to comply with a 5300 V
RMS
isolation test volt-
age.
This isolation performance is accomplished through
Vishay double molding isolation manufacturing pro-
cess. Comliance to DIN EN 60747-5-2(VDE0884)/
DIN EN 60747-5-5 pending partial discharge isolation
specification is available for these families by ordering
option 1.
These isolation processes and the Vishay ISO9001
quality program results in the highest isolation perfor-
mance available for a commecial plastic phototransis-
tor optocoupler.
The devices are available in lead formed configura-
tion suitable for surface mounting and are available
either on tape and reel, or in standard tube shipping
containers.
Note:
Designing with data sheet is cover in Application Note 45
Order Information
For additional information on the available options refer to
Option Information.
Part
Remarks
4N35
CTR > 100 %, DIP-6
4N36
CTR > 100 %, DIP-6
4N37
CTR > 100 %, DIP-6
4N38
CTR > 20 %, DIP-6
4N35-X006
CTR > 100 %, DIP-6 400 mil (option 6)
4N35-X007
CTR > 100 %, SMD-6 (option 7)
4N35-X009
CTR > 100 %, SMD-6 (option 9)
4N36-X007
CTR > 100 %, SMD-6 (option 7)
4N36-X009
CTR > 100 %, SMD-6 (option 9)
4N37-X006
CTR > 100 %, DIP-6 400 mil (option 6)
4N37-X009
CTR > 100 %, SMD-6 (option 9)
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2
Document Number 83717
Rev. 1.5, 27-Jan-05
4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
V
R
6.0
V
Forward current
I
F
60
mA
Surge current
10 s
I
FSM
2.5
A
Power dissipation
P
diss
100
mW
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter breakdown
voltage
V
CEO
70
V
Emitter-base breakdown
voltage
V
EBO
7.0
V
Collector current
I
C
50
mA
(t
1.0 ms)
I
C
100
mA
Power dissipation
P
diss
150
mW
Parameter
Test condition
Symbol
Value
Unit
Isolation test voltage
V
ISO
5300
V
RMS
Creepage
7.0
mm
Clearance
7.0
mm
Isolation thickness between
emitter and detector
0.4
mm
Comparative tracking index per
DIN IEC 112/VDE0303,part 1
175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 C
R
IO
10
12
V
IO
= 500 V, T
amb
= 100 C
R
IO
10
11
Storage temperature
T
stg
- 55 to + 150
C
Operating temperature
T
amb
- 55 to + 100
C
Junction temperature
T
j
100
C
Soldering temperature
max. 10 s dip soldering:
distance to seating plane
1.5 mm
T
sld
260
C
4N35/ 4N36/ 4N37/ 4N38
Document Number 83717
Rev. 1.5, 27-Jan-05
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
1)
Indicates JEDEC registered value
Output
1)
Indicates JEDEC registered value
Coupler
1)
Indicates JEDEC registered value
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
1)
I
F
= 10 mA
V
F
1.3
1.5
V
I
F
= 10 mA, T
amb
= - 55 C
V
F
0.9
1.3
1.7
V
Reverse current
1)
V
R
= 6.0 V
I
R
0.1
10
A
Capacitance
V
R
= 0, f = 1.0 MHz
C
O
25
pF
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Collector-emitter breakdown
voltage
1)
I
C
= 1.0 mA
4N35
BV
CEO
30
V
4N36
BV
CEO
30
V
4N37
BV
CEO
30
V
4N38
BV
CEO
80
V
Emitter-collector breakdown
voltage
1)
I
E
= 100
A
BV
ECO
7.0
V
Collector-base breakdown
voltage
1)
I
C
= 100
A, I
B
= 1.0
A
4N35
BV
CBO
70
V
4N36
BV
CBO
70
V
4N37
BV
CBO
70
V
4N38
BV
CBO
80
V
Collector-emitter leakage
current
1)
V
CE
= 10 V, I
F
= 0
4N35
I
CEO
5.0
50
nA
4N36
I
CEO
5.0
50
nA
V
CE
= 10 V, I
F
=0
4N37
I
CEO
5.0
50
nA
V
CE
= 60 V, I
F
= 0
4N38
I
CEO
50
nA
V
CE
= 30 V, I
F
= 0, T
amb
=
100 C
4N35
I
CEO
500
A
4N36
I
CEO
500
A
4N37
I
CEO
500
A
V
CE
= 60 V, I
F
= 0, T
amb
=
100 C
4N38
I
CEO
6.0
A
Collector-emitter capacitance
V
CE
= 0
C
CE
6.0
pF
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Resistance, input to output
1)
V
IO
= 500 V
R
IO
10
11
Capacitance (input-output)
f = 1.0 MHz
C
IO
0.5
pF
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4
Document Number 83717
Rev. 1.5, 27-Jan-05
4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors
Current Transfer Ratio
1)
Indicates JEDEC registered value
Switching Characteristics
1)
Indicates JEDEC registered value
Typical Characteristics (Tamb = 25
C unless otherwise specified)
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
DC Current Transfer Ratio
1)
V
CE
= 10 V, I
F
= 10 mA
4N35
CTR
DC
100
%
4N36
CTR
DC
100
%
4N37
CTR
DC
100
%
V
CE
= 10 V, I
F
= 20 mA
4N38
CTR
DC
20
%
V
CE
= 10 V, I
F
= 10 mA,
T
A
= - 55 to + 100 C
4N35
CTR
DC
40
50
%
4N36
CTR
DC
40
50
%
4N37
CTR
DC
40
50
%
4N38
CTR
DC
30
%
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Switching time
1)
I
C
= 2 mA, R
L
= 100
, V
CC
= 10 V
t
on
, t
off
10
s
Figure 1. Forward Voltage vs. Forward Current
i4n25_01
100
10
1
.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
I
F
- Forward Current - mA
V
F
-
F
orward
Voltage
-
V
T
A
= 55C
T
A
= 25C
T
A
= 85C
Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED
Current
i4n25_02
Normalized to:
0.0
0.5
1.0
1.5
0
1
10
100
I
F
- LED Current - mA
NCTR
NCTR(SAT)
NCTR
-
Normlized
CTR
CTRce(sat) Vce=0.4 V
Vce=10 V, I
F
=10 mA, T
A
=25C
T
A
=25C
4N35/ 4N36/ 4N37/ 4N38
Document Number 83717
Rev. 1.5, 27-Jan-05
Vishay Semiconductors
www.vishay.com
5
Figure 3. Normalized Non-saturated and Saturated CTR vs. LED
Current
Figure 4. Normalized Non-saturated and saturated CTR vs. LED
Current
Figure 5. Normalized Non-saturated and saturated CTR vs. LED
Current
i4n25_03
100
10
1
.1
0.0
0.5
1.0
1.5
I
F
- LED Current - mA
NCTR
-
Normalized
CTR
Normalized to:
CTRce(sat) Vce=0.4 V
Vce=10 V, I
F
=10 mA, T
A
=25C
NCTR
NCTR(SAT)
T
A
=50C
i4n25_04
100
10
1
.1
0.0
0.5
1.0
1.5
I
F
- LED Current - mA
NCTR
-
Normalized
CTR
Normalized to:
CTRce(sat) Vce=0.4 V
Vce=10 V, I
F
=10 mA, T
A
=25C
NCTR
NCTR(SAT)
T
A
=70C
i4n25_05
100
10
1
.1
0.0
0.5
1.0
1.5
I
F
- LED Current - mA
NCTR
-
Normalized
CTR
Normalized to:
CTRce(sat) Vce = 0.4 V
Vce=10 V, I
F
=10 mA, T
A
=25C
NCTR
NCTR(SAT)
T
A
=85C
Figure 6. Collector-Emitter Current vs. Temperature and LED
Current
Figure 7. Collector-Emitter Leakage Current vs.Temp.
Figure 8. Normalized CTRcb vs. LED Current and Temp.
i4n25_06
60
50
40
30
20
10
0
0
5
10
15
20
25
30
35
50C
70C
85C
I
F
- LED Current - mA
Ice
-
Collector
Current
-
m
A
25C
i4n25_07
100
80
60
40
20
0
20
10
10
10
10
10
10
10
10
2
1
0
1
2
3
4
5
T
A
- Ambient Temperature - C
Iceo
-
Collector-Emitter
-
n
A
Typical
V
ce
= 10 V
i4n25_08
Normalized to:
0.0
0.5
1.0
1.5
25C
50C
70C
I
F
- LED Current - mA
NCTRcb
-
Normalized
CTRcb
.1
1
10
100
Vcb=9.3 V, I
F
=10 mA, T
A
=25
C
www.vishay.com
6
Document Number 83717
Rev. 1.5, 27-Jan-05
4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors
Figure 9. Normalized Photocurrent vs. I
F
and Temp.
Figure 10. Normalized Non-saturated HFE vs. Base Current and
Temperature
Figure 11. Normalized HFE vs. Base Current and Temp.
i4n25_09
0.
Normalized to:
0.01
1
1
10
I
F
- LED Current - mA
Normalized
Photocurrent
.1
1
10
100
I
F
=10 mA, T
A
=25C
Nib, T
A
=20C
Nib, T
A
= 25C
Nib, T
A
= 50C
Nib, T
A
= 70C
i4n25_10
0.4
0.6
1.0
1.2
Normalized to:
Ib - Base Current -
A
1
10
100
1000
Ib=20
A, Vce=10 V, TA=25C
25C
70C
20C
NHFE
-
Normalized
HFE
0.8
i4n25_11
0.0
0.5
1.0
1.5
25C
20C
50C
70C
NHFE(sat)
-
Normalized
Saturated
HFE
1
10
100
1000
Vce=10 V, Ib=20
A
TA=25
C
Vce=0.4 V
Ib - Base Current -
A
Normalized to:
Figure 12. Propagation Delay vs. Collector Load Resistor
Figure 13. Switching Timing
Figure 14. Switching Schematic
i4n25_12
1
10
100
1000
RL - Collector Load Resistor - k
t PLH
-
P
ropagation
Delay
-
s
2.5
2.0
1.5
1.0
.1
1
10
100
IF =10 mA,TA=25C
VCC=5.0 V, Vth=1.5 V
tPLH
tPHL
t PHL
-
P
ropagation
Delay
-
s
i4n25_13
I
F
t
R
=1.5 V
V
O
t
D
t
S
t
F
t
PHL
t
PLH
V
TH
i4n25_14
VCC = 5.0 V
F=10 KHz,
DF=50%
RL
VO
IF=1 0 mA
4N35/ 4N36/ 4N37/ 4N38
Document Number 83717
Rev. 1.5, 27-Jan-05
Vishay Semiconductors
www.vishay.com
7
Package Dimensions in Inches (mm)
For 4N35/36/37/38..... see DIL300-6 Package dimension in the Package Section.
For products with an option designator (e.g. 4N35-X006 or 4N36-X007)..... see DIP-6 Package dimensions in the Package Section.
DIL300-6 Package Dimensions
DIP-6 Package Dimensions
14770
i178004
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
1
2
3
18
39
.300.347
(7.628.81)
4
typ.
ISO Method A
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8
Document Number 83717
Rev. 1.5, 27-Jan-05
4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors
min.
.315 (8.00)
.020 (.51)
.040 (1.02)
.300 (7.62)
ref.
.375 (9.53)
.395 (10.03)
.012 (.30) typ.
.0040 (.102)
.0098 (.249)
15 max.
Option 9
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
.307 (7.8)
.291 (7.4)
.407 (10.36)
.391 (9.96)
Option 6
.315 (8.0)
MIN.
.300 (7.62)
TYP.
.180 (4.6)
.160 (4.1)
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.028 (0.7)
MIN.
Option 7
18450
4N35/ 4N36/ 4N37/ 4N38
Document Number 83717
Rev. 1.5, 27-Jan-05
Vishay Semiconductors
www.vishay.com
9
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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